Mitsubishi Electric Corp. RT1N430U | 搜芯易Sourcengine

Mitsubishi Electric Corp. RT1N430U

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE WITH BUILT-IN RESISTOR
Additional Feature
BUILT-IN BIAS RESISTOR
Number of Elements
1
Qualification Status
Not Qualified
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
200 MHz