Rectron Semiconductor RSM60N120TL | 搜芯易Sourcengine

Rectron Semiconductor RSM60N120TL

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 60A I(D), 1200V, 0.055ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
330
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
6.6
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.055