RN2510(TE85L,F)
Toshiba Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Bipolar Transistors - Pre-Biased smv pln (lf) transistor pd=300mw f=200mhz
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Number of Elements2
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)120
- Power Dissipation-Max (W)0.3
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RN2510(TE85L,F)
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RN2510(TE85L,F)