Toshiba Corporation RN2108(TE85L) | 搜芯易Sourcengine

Toshiba Corporation RN2108(TE85L)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 0.468
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
80
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
200 MHz