Toshiba Corporation RN1965 | 搜芯易Sourcengine

Toshiba Corporation RN1965

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.3 V
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
BUILT-IN RESISTOR RATIO IS 21.36
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
250 MHz
Collector-base Capacitance-Max
6 pF
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED