Toshiba Corporation RN1962CT | 搜芯易Sourcengine

Toshiba Corporation RN1962CT

生命周期状态
Active-Unconfirmed
说明
Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-N6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
60
Collector Current-Max (IC)
0.05 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
20 V