Toshiba Corporation RN1909(TE85L) | 搜芯易Sourcengine

Toshiba Corporation RN1909(TE85L)

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 2.14
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
70
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
250 MHz