Toshiba Corporation RN1904FE | 搜芯易Sourcengine

Toshiba Corporation RN1904FE

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
250
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED