Toshiba Corporation RN1709JE(TE85L,F) | 搜芯易Sourcengine

Toshiba Corporation RN1709JE(TE85L,F)

生命周期状态
Active
RoHS
符合RoHS标准
说明
NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Number of Elements
2
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
70
Power Dissipation-Max (W)
0.1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Time@Peak Reflow Temperature-Max (s)
30