Toshiba Corporation RN1113ACT(TL3SONY) | 搜芯易Sourcengine

Toshiba Corporation RN1113ACT(TL3SONY)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
120
Collector Current-Max (IC)
0.08 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED