Toshiba Corporation RN1101MFV,L3F(T | 搜芯易Sourcengine

Toshiba Corporation RN1101MFV,L3F(T

生命周期状态
Active
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
VCEsat-Max (V)
0.3
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Collector-base Capacitance-Max (pF)
0.7
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED