Rectron Semiconductor RMP6N60T2 | 搜芯易Sourcengine

Rectron Semiconductor RMP6N60T2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 6A I(D), 600V, 1.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
6
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
185
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
18
Turn-off Time-Max (toff) (ns)
285
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
218
Pulsed Drain Current-Max (IDM) (A)
24
Drain-source On Resistance-Max (ohm)
1.65