Renesas Technology Corp. RJP4301APP-00-T2 | 搜芯易Sourcengine

Renesas Technology Corp. RJP4301APP-00-T2

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RJP4301APP-00#T2 - Nch IGBT for
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
70
Gate-emitter Voltage-Max (V)
33
Turn-off Time-Nom (toff) (ns)
350
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
430