Renesas Technology Corp. RJK0389DPA-00-J53 | 搜芯易Sourcengine

Renesas Technology Corp. RJK0389DPA-00-J53

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 15A I(D), 30V, 0.0165ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XQFP-N7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
10
Drain Current-Max (ID) (A)
15
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
60
Drain-source On Resistance-Max (ohm)
0.0165