FAIRCHILD SEMICONDUCTOR CORP RFT1P06E | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP RFT1P06E

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
1.4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.285 ohm