Toshiba Corporation RFM08U9X | 搜芯易Sourcengine

Toshiba Corporation RFM08U9X

生命周期状态
EOL
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XQFP-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
20
Drain Current-Max (ID) (A)
5
DS Breakdown Voltage-Min (V)
36
Operating Temperature-Max (Cel)
150