Toshiba Corporation RFM03U3CT | 搜芯易Sourcengine

Toshiba Corporation RFM03U3CT

生命周期状态
Contact Mfr
说明
Trans RF MOSFET N-CH 16V 2.5A 3-Pin RF-CST3 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-XBCC-N3
Configuration
SINGLE
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
7
Drain Current-Max (ID) (A)
2.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
16
Operating Temperature-Max (Cel)
150