HARRIS SEMICONDUCTOR RFL2N05 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR RFL2N05

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
30 pF
DS Breakdown Voltage-Min
50 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
8.3 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
8.33 W
Drain-source On Resistance-Max
0.95 ohm