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RFD3N08LSM9A

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR RFD3N08LSM9A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-252AA
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    3 A
  • Transistor Application
    SWITCHING
  • Turn-on Time-Max (ton)
    75 ns
  • DS Breakdown Voltage-Min
    80 V
  • Turn-off Time-Max (toff)
    45 ns
  • Operating Temperature-Max
    175 Cel
  • Transistor Element Material
    SILICON
  • Power Dissipation Ambient-Max
    30 W
  • Drain-source On Resistance-Max
    0.8 ohm

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