RFD3055RLESM
Intersil Corporation
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)40
- Drain Current-Max (ID) (A)12
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
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RFD3055RLESM