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RF1S30P06

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR RF1S30P06
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-262AA
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e0
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    P-CHANNEL
  • Power Dissipation-Max (W)
    120
  • Drain Current-Max (ID) (A)
    30
  • Transistor Element Material
    SILICON
  • Turn-on Time-Max (ton) (ns)
    80
  • DS Breakdown Voltage-Min (V)
    60
  • Turn-off Time-Max (toff) (ns)
    100
  • Operating Temperature-Max (Cel)
    175
  • Power Dissipation Ambient-Max (W)
    120
  • Drain-source On Resistance-Max (ohm)
    0.065

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RF1S30P06
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RF1S30P06