Mitsubishi Electric Corp. RD07MUS2B-T514 | 搜芯易Sourcengine

Mitsubishi Electric Corp. RD07MUS2B-T514

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XQFP-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Operating Temperature-Max (Cel)
150