RD02MUS1B-T112
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.5
- Operating Temperature-Max (Cel)150
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