RD01MUS2B-101,T113
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- ConfigurationSINGLE WITH BUILT-IN DIODE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)0.6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)25
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