Qorvo, Inc QPD1022SQ | 搜芯易Sourcengine

Qorvo, Inc QPD1022SQ

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-PQCC-N16
Configuration
SINGLE
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e4
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
16
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Drain Current-Max (ID) (A)
2.4
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40