Qorvo, Inc QPD1022S2 | 搜芯易Sourcengine

Qorvo, Inc QPD1022S2

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PQCC-N16
Configuration
SINGLE
JESD-609 Code
e4
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
GOLD
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
16
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.4 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260