Mitsubishi Electric Corp. QM30E3Y-H | 搜芯易Sourcengine

Mitsubishi Electric Corp. QM30E3Y-H

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 30A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2 V
JESD-30 Code
R-PUFM-X5
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Additional Feature
BUILT IN BIAS RESISTOR
Fall Time-Max (tf)
3000 ns
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
75
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
250 W
Transistor Element Material
SILICON