HBCONTROLS INC QCB30A60 | 搜芯易Sourcengine

HBCONTROLS INC QCB30A60

生命周期状态
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说明
Power Bipolar Transistor, 30A I(C), 1-Element
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2 V
Fall Time-Max (tf)
2000 ns
Number of Elements
1
Rise Time-Max (tr)
1000 ns
DC Current Gain-Min (hFE)
75
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
250 W