Nexperia BV PZTA42,115 | 搜芯易Sourcengine

Nexperia BV PZTA42,115

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
NPN high-voltage transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
0.5
Case Connection
COLLECTOR
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
300
Power Dissipation Ambient-Max (W)
1.5
Collector-base Capacitance-Max (pF)
3
Transition Frequency-Nom (fT) (MHz)
50
Time@Peak Reflow Temperature-Max (s)
30