INFINEON TECHNOLOGIES AG PXAC201602FCV1R250 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG PXAC201602FCV1R250

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFP-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Power Gain-Min (Gp)
16.5 dB
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
65 V
Operating Temperature-Max
225 Cel
Transistor Element Material
SILICON