INFINEON TECHNOLOGIES AG PTVA120121MV1R1KXUMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG PTVA120121MV1R1KXUMA1

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-PDSO-N10
Configuration
SINGLE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
20.5
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
105
Operating Temperature-Max (Cel)
225