INFINEON TECHNOLOGIES AG PTFB193408SVV1XWSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG PTFB193408SVV1XWSA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IC FET RF LDMOS H-34275G-6/2
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CQSO-X6
Configuration
Dual, Common Source
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
2
Number of Terminals
6
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
200