INFINEON TECHNOLOGIES AG PTFB093608FVV1R250 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG PTFB093608FVV1R250

生命周期状态
Transferred
说明
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CQFP-X6
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
GOLD (10)
Terminal Position
QUAD
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
6
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65