INFINEON TECHNOLOGIES AG PTAC210802FCV1XWSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG PTAC210802FCV1XWSA1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IC AMP RF LDMOS
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED