PSMN8R5-100ES
Nexperia BV
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明POWER FIELD-EFFECT TRANSISTOR, 1
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)100
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Avalanche Energy Rating (Eas) (mJ)219
- Pulsed Drain Current-Max (IDM) (A)429
- Drain-source On Resistance-Max (ohm)0.0085
- Screening Level / Reference StandardIEC-60134
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PSMN8R5-100ES