Nexperia BV PSMN013-100BS | 搜芯易Sourcengine

Nexperia BV PSMN013-100BS

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 68A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
68
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
127
Pulsed Drain Current-Max (IDM) (A)
272
Drain-source On Resistance-Max (ohm)
0.0139
Time@Peak Reflow Temperature-Max (s)
30