Nexperia BV PSMN006-20K | 搜芯易Sourcengine

Nexperia BV PSMN006-20K

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 32A I(D), 20V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Position
DUAL
Additional Feature
LOW THRESHOLD
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
32 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0082 ohm
Pulsed Drain Current-Max (IDM)
60 A
Time@Peak Reflow Temperature-Max (s)
30