Nexperia BV PSMN003-30P,127 | 搜芯易Sourcengine

Nexperia BV PSMN003-30P,127

生命周期状态
EOL
RoHS
符合RoHS标准
说明
N-channel TrenchMOS intermediate level FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
500 mJ
Drain-source On Resistance-Max
0.004 ohm
Pulsed Drain Current-Max (IDM)
400 A