Micron Technology PRN128M16V69AG8GPF-15E | 搜芯易Sourcengine

Micron Technology PRN128M16V69AG8GPF-15E

生命周期状态
Active
REACH
REACH compliant
说明
DDR3 DRAM, 128MX16, CMOS, PBGA96
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
9
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14
JESD-30 Code
R-PBGA-B96
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH
Memory Organization
128MX16
Number of Functions
1
Number of Terminals
96
Terminal Pitch (mm)
0.8
Number of Words Code
128M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
134217728
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA96,9X16,32
Clock Frequency-Max (MHz)
667
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0