Nexperia BV PRMH2Z | 搜芯易Sourcengine

Nexperia BV PRMH2Z

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e3
VCEsat-Max (V)
0.15
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.48
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
50
Collector-base Capacitance-Max (pF)
2.5
Transition Frequency-Nom (fT) (MHz)
230
Screening Level / Reference Standard
AEC-Q101; IEC-60134
Time@Peak Reflow Temperature-Max (s)
30