Micron Technology PRM512M16Z01AD8JY-075E | 搜芯易Sourcengine

Micron Technology PRM512M16Z01AD8JY-075E

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR4 DRAM, 512MX16, CMOS, PBGA96
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
14
JESD-30 Code
R-PBGA-B96
Memory Width
16
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
512MX16
Number of Functions
1
Number of Terminals
96
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA96,9X16,32
Clock Frequency-Max (MHz)
1333
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0