Nexperia BV PMV30UN,215 | 搜芯易Sourcengine

Nexperia BV PMV30UN,215

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
N-channel TrenchMOS ultra low level FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max (ohm)
0.036
Time@Peak Reflow Temperature-Max (s)
30