Nexperia BV PMN22XN,115 | 搜芯易Sourcengine

Nexperia BV PMN22XN,115

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
30 V, single N-channel Trench MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Reference Standard
IEC-60134
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.027 ohm
Time@Peak Reflow Temperature-Max (s)
30