Nexperia BV PMCM6501VNE | 搜芯易Sourcengine

Nexperia BV PMCM6501VNE

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Field-Effect Transistor, 7.3A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PBGA-B6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
7.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max (ohm)
0.022
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30