PK6A8BA
NIKO SEMICONDUCTOR CO LTD
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 19A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)19 A
- Feedback Cap-Max (Crss)162 pF
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)31 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)61 mJ
- Drain-source On Resistance-Max0.0055 ohm
- Pulsed Drain Current-Max (IDM)100 A
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PK6A8BA