PANJIT International Inc. PJW1NA60A_R2_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJW1NA60A_R2_00001

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
600V N-CHANNEL MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Number of Elements
1
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max (ohm)
7.9
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED