PANJIT International Inc. PJU6NA70_T0_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJU6NA70_T0_00001

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
700 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
321 mJ
Drain-source On Resistance-Max
1.7 ohm
Pulsed Drain Current-Max (IDM)
24 A