PANJIT International Inc. PJS6604_S1_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJS6604_S1_00001

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET /SC4/TRR/7"/HF/3K/SOT23-6L/MOS/SOT/NFET-30TLNP/NF30TL-QI23/PJ///
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
1.25
Drain Current-Max (ID) (A)
4.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
22
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.25
Pulsed Drain Current-Max (IDM) (A)
17.6
Drain-source On Resistance-Max (ohm)
0.053
Screening Level / Reference Standard
IEC-61249; MIL-STD-750
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED