PANJIT International Inc. PJQ5866A-AU_R2_000A1 | 搜芯易Sourcengine

PANJIT International Inc. PJQ5866A-AU_R2_000A1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFETs dfn5060b n chan 60v
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
2 N-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
68.2
Drain Current-Max (ID) (A)
7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
77
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
2
Avalanche Energy Rating (Eas) (mJ)
45
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.017
Screening Level / Reference Standard
AEC-Q101; IEC-61249; MIL-STD-750