PANJIT International Inc. PJQ4453P_R2_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJQ4453P_R2_00001

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
15
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
2.1
Pulsed Drain Current-Max (IDM) (A)
56
Drain-source On Resistance-Max (ohm)
0.045
Screening Level / Reference Standard
IEC-61249; MIL-STD-750
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED